Dedicated epitaxial designs and processes enable high power, high frequency, high linearity and high reliability RF applications. Our epitaxial design and process includes customized buffer layer, back-barrier, channel, spacer, top barrier, cap layer as well as in-situ / ex – situ epitaxial passivation layer, which are being optimized to improve the RF performance and reduce RF dispersion
Customized group III - Nitride materials and their alloy, including Aluminum Nitride (AlN), Indium Nitride (InN), Indium Aluminum Nitride (InAlN), Indium Gallium Nitride (InGaN), Indium Gallium Aluminum Nitride (InGaAlN), etc
Major application: the next generation wireless communication (5G) technology