Specification:-
- Manufacturer: Samsung
- Capacity: 256GB | 512GB
- Form Factor: M.2
- Interface: PCIe 3.0 x4 (up to 32 GB/s) NVMe 1.1
- Dimension (WxHxD): Max. 80.15 x 22.15 x 2.38 (mm)
- Storage Memory: Samsung V-NAND
- Controller: Samsung UBX controller
- Cache Memory: Samsung 512 MB Low Power DDR3 SDRAM
- Sequential Read: Up to 2,500 MB/sec
- Sequential Write: Up to 1,500 MB/sec
- Random Read (4KB, QD32): Up to 300,000 IOPS
- Random Write (4KB, QD32): Up to 110,000 IOPS
- Random Read (4KB, QD1): Up to 12,000 IOPS
- Random Write (4KB, QD1): Up to 43,000 IOPS