电子产品

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电子产品供应商和制造商

Electronics

零件，组件和原材料

搜罗全球顶尖零件，组件和原材料公司提供的零件，组件和原材料资讯。您可在贸发网采购平台即时谘询可靠和专业的产品供应商，以获取详尽的资料及报价。

零件，组件和原材料供应商和制造商

Parts, Components & Raw Materials

主动组件

elec

搜罗全球顶尖主动组件公司提供的主动组件资讯。您可在贸发网采购平台即时谘询可靠和专业的产品供应商，以获取详尽的资料及报价。

主动组件供应商和制造商

Active Components

ZONKAS ELECTRONIC CO.,LTD.

IGBT Absorbing Capacitor (Terminal Tab)

United Sources Electronic Components Ltd

2SK, AUIRFS, BSS, IHW, IPA, IPD, IPG, IPP, IPW, IRF, IRFB, IRFBC, IRFD, IRFDC, IRFI, IRFIBC, IRFIBF, IRFL, IRFP, IRFPC, IRFR, IRFRC, IRFS, IRFU, IRFZ, IRGP, IRLML, IRLZ, ITLL, STP, FQP, FQPF, SI, SIHP, SPA, SPW, SPP, SPD, STB, STD, STF, STFI, STFU, STFW, STL, STP, STW, SUD, SUM, SUP Series
Stock is first come first served &amp; price for final reconfirmation

N-Channel Mosfet Transistor with Three Terminals

深圳市鲁光电子科技有限公司

   BTA41-600B TO-3P.   40A standard TRIAC.   High surge current capability.   Glass passivated PNPN devices.  

TRIAC

   Package: TO-92.   High performance.   10 years manufacturing experience.   Collector-base voltage: 50V.   Collector-emitter voltage: 45V.   Emitter-base voltage: 5V.   Collector current-continuous: 800mA.   Collector power dissipation: 625mW.   Very competitive price.   Packing quantity: 1,000pcs/bag or 2,000pcs/tape &amp; box.   Lead time: 2 weeks.  

PNP Transistor

Huichuan Electric Limited Company of Weifang

Mosfet

Audio Transistor

6821,13001,13002,13003,13005,13007,13009 etc.

Power Transistor

Jiangsu DongGuang Micro-Electronics Co., Ltd

This insulated gate bipolar transistor (IGBT) is a three-terminal power semiconductor device. The IGBT is renowned for its high efficiency and fast switching. This IGBT is commonly used in refrigerators, air conditioners an so on.
 
  Reliable and stable. 
  Easy to install. 
 

Insulated Gate Bipolar Transistor

iQXPRZ Power Inc.

The intelligent integrated power electronic parts featured here provide total solution. They are designed for power discretes. Assorted designs are available.
    Diodes :Ultra fast recovery diodes, fast recovery diodes  Diodes: MOSFETs  Diodes :IGBTs  Power modules: Diodes  Power modules: MOSFETs  Power modules: IGBTs  Power modules: Integrated power modules  Power modules: IGBT or MOSFET modules  Power modules: Built-in IC ( gate driver and protection )  Power modules: Built-in thermistor  Dual driver: 2 independent IGBT with FWD  Dual driver: Built-in drive circuit ( optically coupled )  Dual driver: Built-in thermistor  

Intelligent Integrated Power Electronics

Jiangsu Jiejie Microelectronics Co.,Ltd.

BTA06/BTA08/BTA12/BTA16/BTA24/BTA41/SMAJ14A/SMCJ6.5CA/SMAJ58A/M7/S6M/

Triac

The power electronic products as shown are available in different designs. They are designed for power discrete. Diodes available include fast recovery diodes and ultra fast recovery diodes.   MOSFETs, IGBTs  Power Modules: IGBTs, MOSFETs, diodes  Intelligent power modules :  IGBTs or MOSFETs modules  Built-in IC ( gate driver and protection )  Built-in thermistor  Dual driver :  2 independent IGBT with FWD  Built-in drive circuit ( optically coupled )  Built-in thermistor  

Power Electronic Products

Party Industrial Co Ltd

Transistor 	 NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications  

NPN Silicon Epitaxial Planar Transistor

东洋数码电子有限公司

 	 High protection ability against EMI 	 Circular lens for improved reception characteristics 	 Available for various carrier frequencies 	 Min burst length: 6 cycles 	 Min gap length: 10 cycles 	 Suitable for continuous code 	 Low operation voltage and low power consumption 	 Optimized immunity against TFT backlight interferences 	 High immunity against ambient light 	 Long reception range 	 High sensitivity  

Infrared Receiver Module

Shenzhen Goford Semiconductor  CO., LTD

 	 120V 	 110A 	 5m&Omega; 	 192W 	 VTH 2~4V 	 TO-220 Package 	 N channel  

IC Electronic Components Semiconductor Mosfet Transistor SGT MOS

 	 100V 	 52A 	 6.2m&Omega; 	 60W 	 TO-252 package 	 N channel  

IC Semiconductor Mosfet Transistor

 	 120V 	 60A 	 490m&Omega; 	 140W 	 TO-220 Package 	 N channel 	 VTH 1.5~2.5V  

IC Electronic Components Semiconductor Mosfet Transistor

 	 GT045N10T 	 TO-220/263 	 N Channel 	 100V 	 130A 	 Pd 156W&nbsp;&nbsp; 	 RDS 4.1m&Omega;@VGS=10V 	 VTH 2V  

Transistor GT045N10 SGT 100V MOSFET

 	 GT52N10D5 DFN5 x 6&nbsp; N&nbsp; CHANNEL&nbsp; 100V &plusmn;20 71A&nbsp; PD 79W &nbsp; VTH 1.65V&nbsp; &nbsp; &nbsp;RDS 6.7m&Omega; @VGS=10V&nbsp; &nbsp;  

Semiconductor Mosfet Transistor SGT MOS

 	 SGT Technogolgy 	 SOP-8 	 N&nbsp; CHANNEL&nbsp; 	 60V &nbsp;&nbsp; 	 12A &nbsp;&nbsp; 	 Pd 3.1W 	 RDS（on）7.6mΩ&nbsp; @VGS=10V 	 VTH 1.7V  

Semiconductor Mosfet Transistor 120V SGT FET

 	 120V 	 50A 	 10m&Omega; 	 140W 	 VTH 1.5~2.5V 	 DFN 5*6 Package 	 N channel  

IC Electronic Components Semiconductor SGT 120V Mosfet Transistor

 	 100V 	 12A 	 10.8m&Omega; 	 3.5W 	 SOP-8 package 	 N channel 	 VTH 1.5V  

Mosfet Transistor SGT technology GT135N10S 100V

 	 SGT Technogolgy&nbsp;&nbsp; 	 N&nbsp; Channel 	 150V 	 140A 	 Vgs(th)&nbsp; 2.5~4.5V 	 Rds(on)= 5.8m&Omega;&nbsp; @Vgs=10V 	 Pd&nbsp; 400W 	 TO-220  

Semiconductor Mosfet Transistor SGT 150V MOS

Fujingwei Electronics (HK) Company Limited

 	 Package of SOT-89  Fujingwei Electronics Co., Ltd
 E-mail: jason@fjwsz.com
Skype: live:529066187 

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